Fundamentals of RF and Microwave Transistor Amplifiers by Inder Bahl
By Inder Bahl
A accomplished and up to date remedy of RF and Microwave Transistor Amplifiers
This booklet presents cutting-edge insurance of RF and microwave transistor amplifiers, together with low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. themes lined comprise modeling, research, layout, packaging, and thermal and fabrication concerns.
via a special integration of conception and perform, readers will learn how to resolve amplifier-related layout difficulties starting from matching networks to biasing and balance. greater than 240 difficulties are incorporated to assist readers try their uncomplicated amplifier and circuit layout skills-and greater than 1/2 the issues function absolutely worked-out ideas.
With an emphasis on idea, layout, and daily purposes, this ebook is aimed at scholars, lecturers, scientists, and practising engineers who're drawn to broadening their wisdom of RF and microwave transistor amplifier circuit design.
Contents in Brief
1. creation 1
2. Linear community research 17
3. Amplifier features and Definitions 33
4. Transistors 61
5. Transistor versions 91
6. Matching community elements 125
7. Impedance Matching recommendations 149
8. Amplifier sessions and Analyses 185
9. Amplifier layout tools 211
10. High-Efficiency Amplifier innovations 259
11. Broadband Amplifier ideas 295
12. Linearization recommendations 331
13. High-Voltage energy Amplifier layout 363
14. Hybrid Amplifiers 399
15. Monolithic Amplifiers 419
16. Thermal layout 453
17. balance research 479
18. Biasing Networks 507
19. energy Combining 527
20. built-in functionality Amplifiers 557
21. Amplifier programs 585
22. Transistor and Amplifier Measurements 613
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Extra info for Fundamentals of RF and Microwave Transistor Amplifiers
Example text
33c) now requires that |S23 | = 1. 33d) S32 = 0. 34b) Consequently, there is a perfect transmission from port 3 into port 2, from port 2 into port 1, and from port 1 into port 3. Also, there is no transmission in the reverse directions, and the device therefore acts as a perfect circulator. 8, working as a 3-dB power divider. The input port 1 is matched and the input power is divided equally at the output ports 2 and 3. 5. 4 S -Parameters 27 √ Equal power division implies |S21 | = |S31 | = 1/ 2.
These include broadband wireless access systems, communication, and electronic warfare. ), and applications (low or high volume). Cost is first and foremost driven by manufacturing volume. Complex amplifiers in very high-volume commercial use cost less than relatively simple amplifiers with very little volume. 00, while high-power modules cost $2000–5000. 50–2 W) in die form or packaged sell for $5–30. High-power (10–20 W) X-band MMIC amplifiers are available in the $100–200 range in moderate quantities.
Collin, Foundations of Microwave Engineering, McGraw-Hill, New York, 1992. 3. D. M. Pozar, Microwave Engineering, John Wiley & Sons, Hoboken, NJ, 1992. 4. I. J. Bahl and P. Bhartia, Microwave Solid State Circuit Design, 2nd edition, John Wiley & Sons, Hoboken, NJ, 2003. 5. A. Grebennikov, RF and Microwave Power Amplifier Design, McGraw-Hill, New York, 2004. 1 Determine the Z-parameters for the network shown below. 2 Determine the Y -parameters for the network shown below. 3 The output of a two-port network with S-parameters S11 , S12 , S21 , and S22 is terminated with an impedance ZL .