Progress in SOI Structures and Devices Operating at Extreme by Maria J. Anc (auth.), F. Balestra, A. Nazarov, V. S. Lysenko

Progress in SOI Structures and Devices Operating at Extreme by Maria J. Anc (auth.), F. Balestra, A. Nazarov, V. S. Lysenko

By Maria J. Anc (auth.), F. Balestra, A. Nazarov, V. S. Lysenko (eds.)

A evaluation of homes, functionality and actual mechanisms of the most silicon-on-insulator (SOI) fabrics and units. specific cognizance is paid to the reliability of SOI constructions working in harsh stipulations. the 1st a part of the ebook offers with fabric know-how and describes the SIMOX and ELTRAN applied sciences, the smart-cut procedure, SiCOI constructions and MBE development. the second one half covers reliability of units working below severe stipulations, with an exam of high and low temperature operation of deep submicron MOSFETs and novel SOI applied sciences and circuits, SOI in harsh environments and the houses of the buried oxide. The 3rd half bargains with the characterization of complicated SOI fabrics and units, protecting laser-recrystallized SOI layers, ultrashort SOI MOSFETs and nanostructures, gated diodes and SOI units produced via various recommendations. The final half experiences destiny clients for SOI constructions, examining wafer bonding concepts, functions of oxidized porous silicon, semi-insulating silicon fabrics, self-organization of silicon dots and wires on SOI and a few new actual phenomena.

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10 110 Sto. d Ar.. LtD,•• (pm) Figure 14. Scanning area size dependence of root-mean-square of the surface roughness (Rrms) measured by AFM. As-etched ELTRAN (open circles), commercially available silicon wafer (triangles) and H 2 annealed ELTRAN (closed circles) are plotted. The annealing conditions are 1150 °C, 80 Torr, 1 h in H2. 7 Wafer Recycling After splitting, residual porous silicon is removed from the seed wafer, which can then be recycled and put back into the ELT~ manufacturing process again and again.

4. J~mffifimiffijff: Epilulal 51 Sftd warer Porous Si -- - - - - i02 FigUf(' 4. ELTRAN* process flow based on seed wafer reusagc. 1 Anodization Firstly, a single-crystal silicon wafer called a seed wafer that can be reused again and again is taken and porous silicon is formed on the surface by means of anodization. The anodization involves passing a current through a solution of HF and ethanol with the single-crystal silicon wafer as the anode in order to form microscopic 2 pores of diameter a few nm on the surface of the wafer at a density of about 1011 /cm • The reaction occurs at the far end of the pores, meaning that the pores progressively elongate into the inside of the wafer.

1201-1202 2. L. Oi Ciaccio, Y. Letiec, F. Letertre, C. Jaussaud and M. Bruel: Electron. Lett. 32 (1996) No. 1144-1145 3. B. Aspar, C. Lagahe, H. Moriceau, A. Soubie and M. Bruel, MRS vol510 (1998) p3812 4. Lauer, G. Jaussaud, Materials Science and Engineering B61-62 (1999) pp 382-388 5. E. Hugonnard-Bruyere, F. Letertre, H. J. Cantin, L. Oi Ciaccio. T. Ouisse, T. Billon, G. Guillot, ICSCRM Abstracts, Raleigh 1999, pl88 6. , Japan. The last established technique is highly reproducible splitting in the Porous Si layer by Water Jet and reuse the seed wafer several times.

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